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Brand Name : original
Model Number : STP11N60DM2
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T
Supply Ability : 1000
Delivery Time : 3-5ddays
Packaging Details : carton box
Drain to Source Voltage (Vdss) : 600 V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16.5 nC @ 10 V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 614 pF @ 100 V
STP11N60DM2 N-Channel 600 V 10A (Tc) 110W (Tc) Through Hole TO-220
Specifications of STP11N60DM2
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | STMicroelectronics |
Series | MDmesh™ DM2 |
Package | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 614 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Base Product Number | STP11 |
Features of STP11N60DM2
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications of STP11N60DM2
• Switching applications
Environmental & Export Classifications of STP11N60DM2
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
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STP11N60DM2 N-Channel 600 V 10A (Tc) 110W (Tc) Through Hole TO-220 Images |