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Brand Name : original
Model Number : SQJ858AEP-T1_GE3
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T
Supply Ability : 100,000
Delivery Time : 1-3working days
Packaging Details : carton box
Drain to Source Voltage (Vdss) : 40 V
Current - Continuous Drain (Id) @ 25°C : 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 55 nC @ 10 V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2450 pF @ 20 V
SQJ858AEP-T1_GE3 N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
Specifications of SQJ858AEP-T1_GE3
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 20 V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |
Base Product Number | SQJ858 |
Features of SQJ858AEP-T1_GE3
• TrenchFET® Power MOSFET
• AEC-Q101 Qualified
• 100 % Rg and UIS Tested
Environmental & Export Classifications of SQJ858AEP-T1_GE3
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
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SQJ858AEP-T1_GE3 Smd Ic N Channel 40 V 58A (Tc) 48W (Tc) PowerPAK® SO-8 Images |